![]() G G S TO-9 N7 (TO-6AB) N7/NS7A S Absolute Maximum Ratings T A = 5 C unless otherwise noted Symbol Parameter N7 N7 NS7A Units SS rain-source oltage 6 GR rain-gate oltage (R GS S(on) N7 5 7 =, S > S(on) NS7A 5 7 g FS Forward Transconductance S =, I = ma N7 ms YNAMIC CHARACTERISTICS S > S(on), I = ma N7 8 S > S(on), I = ma NS7A 8 C iss Input Capacitance S = 5, =, All 5 pf C oss Output Capacitance f =. High density cell design for low R S(ON). These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. They can be used in most applications requiring up to 4mA C and can deliver pulsed currents up to A. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. 1 November 995 N7 / N7 / NS7A N-Channel Enhancement Mode Field Effect Transistor General escription Features These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, MOS technology. ![]()
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